Selected Publications

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2012
Incorporation, Valence State, and Electronic Structure of Mn and Cr in Bulk Single Crystal β-Ga2O3, T.C. Lovejoy; Renyu Chen; E.N. Yitamben; V. Shutthanadan; S.M. Heald; E.G. Villora; K. Shimamura; S. Zheng; S.T. Dunham; F.S. Ohuchi; et al., Journal of Applied Physics 2012;111(12).
Band Bending and Surface Defects in β-Ga2O3, T.C. Lovejoy; Renyu Chen; X. Zheng; E.G. Villora; K. Shimamura; H. Yoshikawa; Y. Yamashita; S. Ueda; K. Kobayashi; S.T. Dunham; et al. Applied Physics Letters 2012;100(18)
Multifunctional Protein-Enabled Patterning on Arrayed Ferroelectric Materials, M. Hnilova; X. Liu; E. Yuca; C. Jia; B. Wilson; A.Y. Karatas; C. Gresswell; F. Ohuchi; K. Kitamura; C. Tamerler ACS Applied Materials and Interfaces 2012;4(4):1865-1871.
Single-Step Fabrication of Patterned Gold Film Array by an Engineered Multi-Functional Peptide, Marketa Hnilova; Dmitriy Khatayevich; Alisa Carlson; Ersin Emre Oren; Carolyn Gresswell; Sam Zheng; Fumio Ohuchi; Mehmet Sarikaya; Candan Tamerler Journal of Colloid and Interface Science 2012;365(1):97-102.
Uniaxially Aligned Nanofibrous Cylinders by Electrospinning, Jana, Soumen; Cooper, Ashleigh; Ohuchi, Fumio; Zhang, Miqin, ACS Applied Materials & Interfaces 2012; 4(9):4817-24.
The Oxidation Process of SiON Films Fabricated via Polymer Derived Ceramic Route: Bonding State Characterized by X-Ray Photoelectron Spectroscopy, Kaishi Wang; Xiaohao Zheng; Fumio S. Ohuchi; Rajendra K. Bordia, Accepted by Journal of the American Ceramic SocietyTo Appear November 2012.
Thermoelectric Properties of Reduced Polycrystalline Sr0.5Ba0.5Nb2O6 Fabricated via Solution Combustion Synthesis, Christopher S. Dandeneau; Tyler W. Bodick; Rajendra K. Bordia; Fumio S. Ohuchi, Submitted to Journal of the American Ceramic Society
2011
Thermal-Induced Domain Wall Motion of Tip-Inverted Micro/Nanodomains in Near-Stoichiometric LiNbO3 Crystals, X.Y. Liu; K. Kitamura; Y.M. Liu; F.S. Ohuchi; J.Y. Li Journal of Applied Physics 2011;110(5)
Thermal-Induced Domain Wall Motion of Tip-Inverted Micro/Nanodomains in Near-Stoichiometric LiNbO3 Crystals, X.Y. Liu; K. Kitamura; Y.M. Liu; F.S. Ohuchi; J.Y. Li Journal of Applied Physics 2011;110(5)
Patterning of Silver Nanoparticles on Visible Light-Sensitive Mn-Doped Lithium Niobate Photogalvanic Crystals Xiaoyan Liu, Hideki Hatano; Shunji Takekawa; Fumio Ohuchi; Kenji Kitamura; Applied Physics Letters 2011;99(5)
Effects of Electrode Surface Modification with Chlorotoxin on Patterning Single Glioma Cells, Fareid Asphahani; Xiaohao Zheng; Omid Veiseh; Myo Thein; Jian Xu; Fumio Ohuchi; Miqin Zhang Physical Chemistry Chemical Physics 2011;13(19):8953-8960
Controlling Vertical Morphology Within the Active Layer of Organic Photovoltaics Using Poly(3-Hexylthiophene) Nanowires and Phenyl-C 61-Butyric Acid Methylester, Andrew H. Rice; Rajiv Giridharagopal; Sam X. Zheng; Fumio S. Ohuchi; David S. Ginger; Christine K. Luscombe; ACS Nano 2011;5(4):3132-3140
Controlling The Growth Morphology and Phase Segregation of Mn-Doped Ga2Se3 on Si(001), T.C. Lovejoy; E.N. Yitamben; S.M. Heald; F.S. Ohuchi; M.A. Olmstead, Physical Review B - Condensed Matter and Materials Physics 2011;83(15)
Correlation Between Morphology, Chemical Environment, and Ferromagnetism in the Intrinsic-Vacancy Dilute Magnetic Semiconductor Cr-Doped Ga2Se 3/Si(001), E.N. Yitamben; T.C. Lovejoy; A.B. Pakhomov; S.M. Heald; E. Negusse; D. Arena; F.S. Ohuchi; M.A. Olmstead, Physical Review B - Condensed Matter and Materials Physics 2011;83(4)
2010
P.J. Shamberger; A.B. Pakhomov; K. Koyama; F.S. Ohuchi Deviation of the magnetization change from the structural phase transition temperature in polycrystalline Ni-Mn-Sn in low magnetic fields Scripta Materialia 2010;63(12):1161-1164
Orb Acton; Guy G. Ting; Patrick J. Shamberger; Fumio S. Ohuchi; Hong Ma; Alex K.-Y. Jen Erratum: Dielectric surface-controlled low-voltage organic transistors via n-alkyl phosphonic acid self-assembled monolayers on high-k metal oxide (ACS Applied Materials and Interfaces (2010) 2 (511)) ACS Applied Materials and Interfaces 2010;2(10):2963
T.C. Lovejoy; E.N. Yitamben; T. Ohta; S.C. Fain; F.S. Ohuchi; M.A. Olmstead One-dimensional electronic states in Ga2Se3 on Si(001):As Physical Review B - Condensed Matter and Materials Physics 2010;81(24)
Ying Wang; Orb Acton; Guy Ting; Tobias Weidner; Patrick J. Shamberge; Hong Maa; Fumio S. Ohuchi; David G. Castner; Alex K.-Y. Jen Effect of the phenyl ring orientation in the polystyrene buffer layer on the performance of pentacene thin-film transistors Organic Electronics: physics, materials, applications 2010;11(6):1066-1073
Orb Acton; Guy G. Ting; Patrick J. Shamberger; Fumio S. Ohuchi; Hong Ma; Alex K.-Y. Jen Dielectric surface-controlled low-voltage organic transistors via n-alkyl phosphonic acid self-assembled monolayers on high-k metal oxide ACS Applied Materials and Interfaces 2010;2(2):511-520 Patrick J. Shamberger; Alexandre B. Pakhomov; Fumio S. Ohuchi Isothermal martensitic transformation kinetics in Ni-Mn-Sn ferromagnetic shape memory alloys Materials Research Society Symposium Proceedings 2010;1200():65-70
Peter D. Kazarinoff; Patrick J. Shamburger; Fumio S. Ohuchi; Christine K. Luscombe OTFT performance of air-stable ester-functionalized polythiophenes Journal of Materials Chemistry 2010;20(15):3040-3045
2009
T.C. Lovejoy; E.N. Yitamben; S.M. Heald; F.S. Ohuchi; M.A. Olmstead MnSe phase segregation during heteroepitaxy of Mn doped Ga2 Se3 on Si(001) Applied Physics Letters 2009;95(24)
Kenneth M. Beck; William R. Wiley; Eswaranand Venkatasubramanian; Fumio Ohuchi Vacancies ordered in screw form (VOSF) and layered indium selenide thin film deposition by laser back ablation Applied Surface Science 2009;255(24):9707-9711
Lei Huang; Feng Peng; Fumio S. Ohuchi "In situ" XPS study of band structures at Cu 2O/TiO 2 heterojunctions interface Surface Science 2009;603(17):2825-2834
E.N. Yitamben; T.C. Lovejoy; D.F. Paul; J.B. Callaghan; F.S. Ohuchi; M.A. Olmstead Surface morphology of Cr: Ga2 Se3 heteroepitaxy on Si(001) Physical Review B - Condensed Matter and Materials Physics 2009;80(7)
A. Tankut; G.C. Vlases; K.E. Miller; F.S. Ohuchi Surface analytical observations during construction and initial operation of TCSU Journal of Fusion Energy 2009;28(2 SPEC. ISS.):212-217
P.J. Shamberger; F.S. Ohuchi Hysteresis of the martensitic phase transition in magnetocaloric-effect Ni-Mn-Sn alloys Physical Review B - Condensed Matter and Materials Physics 2009;79(14)
T.C. Lovejoy; E.N. Yitamben; N. Shamir; J. Morales; E.G. Villora; K. Shimamura; S. Zheng; F.S. Ohuchi; M.A. Olmstead Surface morphology and electronic structure of bulk single crystal ? -Ga 2 O 3 (100) Applied Physics Letters 2009;94(8)
Patrick J. Shamberger; Fumio S. Ohuchi Hysteresis in temperature- and magnetic field- induced martensitic phase transitions in Ni-Mn-Sn heusler alloys Materials Research Society Symposium Proceedings 2009;1129():149-154
Nan Ei Yu; Kenneth M. Beck; Jung Hoon Ro; Fumio S. Ohuchi; Kenji Kitamura Properties of optical parametric oscillation for dental application of soft-and-hard-tissues removal around 2.9 µm IR-band Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest 2009
X.Y. Liu; Y.M. Liu; S. Takekawa; K. Kitamura; F.S. Ohuchi; J.Y. Li Nanopolar structures and local ferroelectricity of Sr0.61Ba 0.39Nb2O6 relaxor crystal across Curie temperature by piezoresponse force microscopy Journal of Applied Physics 2009;106(12)
P. Shamberger; A. Pakhomov; F. Ohuchi Deviation of bulk magnetic property changes from martensitic transition temperature in Ni-Mn-Sn heusler alloys at low fields Materials Science and Technology Conference and Exhibition 2009, MS and T'09 2009;1():108-114
2008
Xiaoyan Liu; Fumio Ohuchi; Kenji Kitamura Patterning of surface electronic properties and selective silver deposition on LiNbO 3 template Functional Materials Letters 2008;1(3):177-182
K.E. Miller; J.A. Grossnickle; R.D. Brooks; C.L. Deards; T.E. DeHart; M. Dellinger; M.B. Fishburn; H.Y. Guo; B. Hansen; J.W. Hayward; et al. The TCS upgrade: Design, construction, conditioning, and enhanced RMF FRC performance Fusion Science and Technology 2008;54(4):946-961
Chih-Yuan Lu; Patrick J. Shamberger; Esmeralda N. Yitamben; Kenneth M. Beck; Alan G. Joly; Marjorie A. Olmstead; Fumio S. Ohuchi Laser and electrical current induced phase transformation of In 2Se3 semiconductor thin film on Si(111) Applied Physics A: Materials Science and Processing 2008;93(1):93-98
Chih-Yuan Lu; Jonathan A. Adams; Qiuming Yu; Taisuke Ohta; Marjorie A. Olmstead; Fumio S. Ohuchi Heteroepitaxial growth of the intrinsic vacancy semiconductor Al2 Se3 on Si(111): Initial structure and morphology Physical Review B - Condensed Matter and Materials Physics 2008;78(7)
Alejandro L. Briseno; Stefan C. B. Mannsfeld; Patrick J. Shamberger; Fumio S. Ohuchi; Zhenan Bao; Samson A. Jenekhe; Younan Xia Self-assembly, molecular packing, and electron transport in n-type polymer semiconductor nanobelts Chemistry of Materials 2008;20(14):4712-4719
2007
Noriaki Suzuki; Mehmet Sarikaya; Fumio S. Ohuchi Adsorption of genetically engineered proteins studied by time-of-flight secondary ion mass spectrometry (TOF-SIMS). Part B: Hierarchical cluster analysis (HCA) Surface and Interface Analysis 2007;39(5):427-433
Noriaki Suzuki; Lara Gamble; Candan Tamerler; Mehmet Sarikaya; David G. Castner; Fumio S. Ohuchi Adsorption of genetically engineered proteins studied by time-of-flight secondary ion mass spectrometry (TOF-SIMS). Part A: Data acquisition and principal component analysis (PCA) Surface and Interface Analysis 2007;39(5):419-426
Shiho Iwanaga; Monika Marciniak; Robert B. Darling; Fumio S. Ohuchi Thermopower and electrical conductivity of sodium-doped V2O 5 thin films Journal of Applied Physics 2007;101(12)
Monika Marciniak; Shiho Iwanaga; Fumio S. Ohuchi Synthesis and investigation of thermoelectric properties of Na-doped V 2O5 TMS Annual Meeting 2007;():29-36
2006
D.A. Schmidt; Taisuke Ohta; C.-Y. Lu; Aaron A. Bostwick; Q. Yu; Eli Rotenberg; F.S. Ohuchi; Marjorie A. Olmstead Semiconducting chalcogenide buffer layer for oxide heteroepitaxy on Si(001) Applied Physics Letters 2006;88(18)
Fumio S. Ohuchi; Subrata Ghose; Mark H. Engelhard; Donald R. Baer Chemical bonding and electronic structures of the Al2SiO5 polymorphs, andalusite, sillimanite, and kyanite: X-ray photoelectron-and electron energy loss spectroscopy studies American Mineralogist 2006;91(5-6):740-746
D.A. Kukuruznyak; P. Ahmet; T. Chikyow; A. Yamamoto; F.S. Ohuchi Electrical screening of ternary NiO-Mn2O3-Co 3O4 composition spreads Applied Surface Science 2006;252(10):3828-3832
Dmitry A. Kukuruznyak; Jerome G. Moyer; Nam T. Nguyen; Edward A. Stern; Fumio S. Ohuchi Relationship between electronic and crystal structure in Cu-Ni-Co-Mn-O spinels: Part A: Temperature-induced structural transformation Journal of Electron Spectroscopy and Related Phenomena 2006;150(2-3):275-281
Dmitry A. Kukuruznyak; Jerome G. Moyer; Michael S. Prowse; Nam Nguyen; John. J. Rehr; Fumio S. Ohuchi Relationship between electronic and crystal structure in Cu-Ni-Co-Mn-O spinels: Part B: Binding energy anomaly in Cu1+ photoemission spectrum Journal of Electron Spectroscopy and Related Phenomena 2006;150(2-3):282-287
Andreas Klust; Qiuming Yu; Marjorie A. Olmstead; Taisuke Ohta; Fumio S. Ohuchi; Markus Bierkandt; Carsten Deiter; Joachim Wollschläger Contrast in scanning probe microscopy images of ultrathin insulator films Applied Physics Letters 2006;88(6)
Dmitry A. Kukuruznyak; Jerome G. Moyer; Fumio S. Ohuchi Improved aging characteristics of NTC thermistor thin films fabricated by a hybrid sol-gel-MOD process Journal of the American Ceramic Society 2006;89(1):189-192
Jerome G. Moyer; Dmitry A. Kukuruznyak; Nam Nguyen; Michael S. Prowse; Fumio S. Ohuchi Thermopower and electrical conductivity of Mn 1.68-X Cu 0.6+X+Y+Z Co 0.24-Y Ni 0.48-Z thin film oxides obtained through metal organic decomposition processing Journal of Applied Physics 2006;100(8)
2005
Andreas Klust; Taisuke Ohta; Aaron A. Bostwick; Eli Rotenberg; Qiuming Yu; Fumio S. Ohuchi; Marjorie A. Olmstead Electronic structure evolution during the growth of ultrathin insulator films on semiconductors: From interface formation to bulklike CaF2Si(111) films Physical Review B - Condensed Matter and Materials Physics 2005;72(20)
Jonathan A. Adams; Aaron A. Bostwick; Fumio S. Ohuchi; Marjorie A. Olmstead Chemical passivity of III-VI bilayer terminated Si(111) Applied Physics Letters 2005;87(17):1-3
D.A. Kukuruznyak; P. Ahmet; T. Chikyow; A. Yamamoto; F.S. Ohuchi Combinatorial screening of ternary NiO-Mn2O3-CuO composition spreads Journal of Applied Physics 2005;98(4):1-4
Dmitry Anatolyevich Kukuruznyak; Parhat Ahmet; Atsushi Yamamoto; Fumio Ohuchi; Toyohiro Chikyow Combinatorial fabrication and characterization of ternary la 2O3- Mn2O3-Co3O 4 composition spreads Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 2005;44(8):6164-6166
Reiner Rudolph; Christian Pettenkofer; Aaron A. Bostwick; Jonathan A. Adams; Fumio Ohuchi; Marjorie A. Olmstead; Bengt Jaeckel; Andreas Klein; Wolfram Jaegermann Electronic structure of the Si(1 1 1):GaSe van der Waals-like surface termination New Journal of Physics 2005;7()
Taisuke Ohta; D.A. Schmidt; Shuang Meng; A. Klust; A. Bostwick; Q. Yu; Marjorie A. Olmstead; F.S. Ohuchi Intrinsic vacancy-induced nanoscale wire structure in heteroepitaxial Ga 2Se 3/Si(001) Physical Review Letters 2005;94(11)
Dmitry A. Kukuruznyak; Jack B. Miller; Michael C. Gregg; Fumio S. Ohuchi Fast response thin-film thermistor for measurements in ocean waters Review of Scientific Instruments 2005;76(2):024905-1-024905-3
J.A. Adams; A. Bostwick; T. Ohta; Fumio S. Ohuchi; Marjorie A. Olmstead Heterointerface formation of aluminum selenide with silicon: Electronic and atomic structure of Si(111):AlSe Physical Review B - Condensed Matter and Materials Physics 2005;71(19)
F.S. Ohuchi; D.A. Kukuruznyak; T. Chiyow Compositional design and property adjustment of multi-component oxides for thermoelectric applications Materials Science Forum 2005;502():3-6
2004 And Later
[2004] Taisuke Ohta; Andreas Klust; Jonathan A. Adams; Qiuming Yu; Marjorie A. Olmstead; Fumio S. Ohuchi Atomic structures of defects at GaSe/Si(111) heterointerfaces studied by scanning tunneling microscopy Physical Review B - Condensed Matter and Materials Physics 2004;69(12):1253221-1253228. Andreas Klust; Taisuke Ohta; Aaron A. Bostwick; Qiuming Yu; Fumio S. Ohuchi; Marjorie A. Olmstead Atomically resolved imaging of a CaF bilayer on Si(111): Subsurface atoms and the image contrast in scanning force microscopy Physical Review B - Condensed Matter and Materials Physics 2004;69(3):354051-354055. [2003] Fumio Nakamura; Eisuke Ito; Yosuke Sakao; Nobuo Ueno; Isaiah N. Gatuna; Fumio S. Ohuchi; Masahiko Hara Preparation of a branched DNA self-assembled monolayer toward sensitive DNA biosensors Nano Letters 2003;3(8):1083-1086. Ladan Mohaddes-Ardabili; Luz J. Martínez-Miranda; Joseph Silverman; Aristos Christou; Lourdes G. Salamanca-Riba; Mohamad Al-Sheikhly; William E. Bentley; F. Ohuchi Attachment of DNA probes on gallium arsenide surface Applied Physics Letters 2003;83(1):192-194. Atsushi Yamamoto; Dmitry Kukuruznyak; Parhat Ahmet; Toyohiro Chikyow; Fumio S. Ohuchi High-throughput screening of thermoelectric materials; application of thermal probe method to composition-spread samples Materials Research Society Symposium - Proceedings 2003;804():3-14. [2001] S. Meng; B.R. Schroeder; A. Bostwick; M.A. Olmstead; E. Rotenberg; F.S. Ohuchi Low-energy photoelectron diffraction structure determination of GaSe-bilayer-passivated Si(111) Physical Review B - Condensed Matter and Materials Physics 2001;64(23):2353141-2353148. Satomi Ohno; Moon-Hwan Lee; Kuen Y. Lin; Fumio S. Ohuchi Surface characterization of IM7/5260 composites by x-ray photoelectron spectroscopy Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films 2001;19(4):1116-1120. Dmitry A. Kukuruznyak; Scott A. Bulkley; Kimberly A. Omland; Fumio S. Ohuchi; Michael C. Gregg Preparation and properties of thermistor thin-films by metal organic decomposition Thin Solid Films 2001;385(1-2):89-95. T. Hirata; F.S. Ohuchi Temperature dependence of the Raman spectra of 1T-TaS 2 Solid State Communications 2001;117(6):361-364. S. Ohno; M.-H. Lee; F.S. Ohuchi NF3 plasma treatment of IM7/5260 for the improvement of moisture resistance International SAMPE Symposium and Exhibition (Proceedings) 2001;46 II():2312-2320. S. Ohno; M.-H. Lee; F.S. Ohuchi Surface modification of IM7/5260 composites by NF3 DC- plasma Collection of Technical Papers - AIAA/ASME/ASCE/AHS/ASC Structures, Structural Dynamics and Materials Conference 2001;2():1375-1379. [2000] Satomi Ohno; Moon-Hwan Lee; Kuen Y Lin; Fumio S Ohuchi Thermal degradation of IM7/BMI5260 composite materials: Characterization by X-ray photoelectron spectroscopy Materials Science and Engineering A 2000;293(1):88-94. Susamu Taketomi; Z.R. Dai; Fumio S. Ohuchi Electron diffraction of yttrium iron oxide nanocrystals prepared by the alkoxide method Journal of Magnetism and Magnetic Materials 2000;217(1):5-13. T.W. Little; F.S. Ohuchi Chemical interaction of NF3 ion beams and plasmas with Si (Part I): X-ray photoelectron spectroscopy studies Surface Science 2000;445(2-3):235-242. A. Endou; T.W. Little; A. Yamada; K. Teraishi; M. Kubo; S.S.C. Ammal; A. Miyamoto; M. Kitajima; F.S. Ohuchi Chemical interaction of NF 3 with Si (Part II): density functional calculation studies Surface Science 2000;445(2-3):243-248. Satomi Ohno; Kuen Y. Lin; Fumio S. Ohuchi 'In-situ' characterization of thermal degradation in graphite/polymeric composites Collection of Technical Papers - AIAA/ASME/ASCE/AHS/ASC Structures, Structural Dynamics and Materials Conference 2000;1(II):1456-1464. [1999] K. Ueno; M. Kawayama; Z.R. Dai; A. Koma; F.S. Ohuchi Growth and characterization of Ga 2Se 3/GaAs(1 0 0) epitaxial thin films Journal of Crystal Growth 1999;207(1):69-76. Z.R. Dai; S.Y. Son; B.S. Kim; D.K. Choi; F.S. Ohuchi Electrically conducting oxide thin films of (Sr,Ca)RuO 3 and structural compatibility with (Ba,Sr)TiO 3 Materials Research Bulletin 1999;34(6):933-942. Seung Young Son; Boum Seock Kim; Se Hoon Oh; Duck Kyun Choi; Cha Young Yoo; Sang In Lee; Z.R. Dai; Fumio S. Ohuchi Electrical properties of (Ba,Sr)TiO 3 on (Sr,Ca)RuO 3 electrode Journal of Materials Science 1999;34(24):6115-6119. Y. Wu; F.S. Ohuchi; G.Z. Cao Synthesis and dielectric properties of SrBi 2Nb 2O 9 layered perovskite by sol-gel processing Materials Research Society Symposium - Proceedings 1999;541():253-258. Z.R. Dai; S.R. Chegwidden; L.E. Rumaner; F.S. Ohuchi Microstructure evolution of GaSe thin films grown on GaAs(100) by molecular beam epitaxy Journal of Applied Physics 1999;85(5):2603-2608. [1998] J.-W. Chung; Z.R. Dai; K. Adib; F.S. Ohuchi Raman scattering and high resolution electron microscopy studies of metal-organic chemical vapor deposition-tungsten disulfide thin films Thin Solid Films 1998;335(1-2):106-111. Scott Chegwidden; Zurong Dai; Marjorie A. Olmstead; Fumio S. Ohuchi Molecular beam epitaxy and interface reactions of layered GaSe growth on sapphire (0001) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 1998;16(4):2376-2380. Lee E. Rumaner; Marjorie A. Olmstead; Fumio S. Ohuchi Interaction of GaSe with GaAs(111): Formation of heterostructures with large lattice mismatch Journal of Vacuum Science and Technology B: Microelectronics and Nanometer J.-W. Chung; Z.R. Dai; F.S. Ohuchi WS 2 thin films by metal organic chemical vapor deposition Journal of Crystal Growth 1998;186(1-2):137-150. T.W. Little; S.C. Briggs; F.S. Ohuchi Surface science studies of NF3 plasma and ion beam interactions with silicon Materials Research Society Symposium - Proceedings 1998;532():165-170. Seung Young Son; Boum Seock Kim; Duck Kyun Choi; Kong Soo Lee; Z.R. Dai; Fumio S. Ohuchi Microstructural control of (Ca,Sr)RuO 3 electrode and the related properties of (Ba,Sr)TiO 3 thin films Journal of the Korean Physical Society 1998;32(4 SUPPL.):S1517- S1520. T. Shimada; K. Hamaguchi; A. Koma; F.S. Ohuchi Electronic structures at the interfaces between copper phthalocyanine and layered materials Applied Physics Letters 1998;72(15):1869-1871. Z.R. Dai; F.S. Ohuchi Vacancy ordering of Ga 2Se 3 at GaSe/GaAs(100) interface Applied Physics Letters 1998;73(7):966-968. [1997] Lee E. Rumaner; Jennifer L. Gray; Fumio S. Ohuchi Nucleation and growth of GaSe on GaAs by Van der Waal epitaxy Journal of Crystal Growth 1997;177(1-2):17-27. T.W. Little; F.S. Ohuchi X-ray photoelectron spectroscopy investigation of the interaction of NF3 with silicon Materials Research Society Symposium - Proceedings 1997;439():251-256. J.-W. Chung; F.S. Ohuchi Deposition of AlN on ws2 (0001) substrate by atomic layer growth process Materials Research Society Symposium - Proceedings 1997;449():379-384. A.C. Richards; M.R. Richards; F.S. Ohuchi A new versatile coating technique: Levitation chemical vapor deposition Surface and Coatings Technology 1997;88(1-3):112-118. [1996] T.W. Little; F.S. Ohuchi X-ray photoelectron spectroscopy investigation of the interaction of NF3 with silicon Materials Research Society Symposium - Proceedings 1996;438():161-166. Heather L. Beck; Moon-H. Lee; Fumio S. Ohuchi Effects of ion bombardment on chemical interactions at SiC surface and Al/SiC interfaces Materials Research Society Symposium - Proceedings 1996;438():253-258. [1995] Ki-Oh Hwang; Yuji Yakura; Fumio S. Ohuchi; Tomikazu Sasaki Template-assisted assembly of metal binding sites on a silica surface Materials Science and Engineering C 1995;3(2):137-141. A. Ludviksson; L.E. Rumaner; J.W. Rogers Jr.; F.S. Ohuchi Vacuum sublimation of GaSe: a molecular source for deposition of GaSe Journal of Crystal Growth 1995;151(1-2):114-120. M.R. Richards; A.C. Richards; M. Taya; F.S. Ohuchi Thermomechanical and chemical properties of SiC-C functionally gradient coatings on graphite Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 1995;13(3):1196-1201. Lee E. Rumaner; J.L. Gray; F.S. Ohuchi; K. Ueno; A. Koma Substrate effects on the nucleation and growth of GaSe layers by van der Waals epitaxy Materials Research Society Symposium - Proceedings 1995;382():101-106. X. Hu; H. Yan; M. Kohyama; F.S. Ohuchi Electronic structure of beta -SiC surfaces Journal of Physics: Condensed Matter 1995;7(6):1069-1099. [1994] F.S. Ohuchi; T.J. Lin; J.A. Antonelli; D.J. Yang Preparation and in-situ characterization of polycarbosilane thin films by d.c. plasma-enhanced deposition Thin Solid Films 1994;245(1- 2):10-16. Toshihiro Shimada; Fumio S. Ohuchi; Bruce A. Parkinson Work function and photothreshold of layered metal dichalcogenides Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 1994;33(5 A):2696-2698. L.E. Rumaner; F.S. Ohuchi Van der Waals epitaxy of GaSe on GaAs (111) Materials Research Society Symposium - Proceedings 1994;340():527-537. Fumio S. Ohuchi; Xiao Hu; Tadatomo Suga Electronic process of joining metal and ceramic by 'surface activated bonding' Materials Research Society Symposium - Proceedings 1994;337():727-732. Jennifer L. Gray; L.E. Rumaner; H.M. Yoo; F.S. Ohuchi Van der Waals epitaxy versus homoepitaxy of low temperature GaAs (111) layers Materials Research Society Symposium - Proceedings 1994;340():381-385. Xiao Hu; Hong Yan; Fumio S. Ohuchi Electronic structures of ?-SiC(001) surfaces and Al/?- SiC(001) interface Materials Research Society Symposium - Proceedings 1994;339():15-20. R.H. French; S.J. Glass; F.S. Ohuchi; Y.-N. Xu; W.Y. Ching Experimental and theoretical determination of the electronic structure and optical properties of three phases of ZrO2 Physical Review B 1994;49(8):5133-5142. [1993] Toshihiro Shimada; Fumio S. Ohuchi; Atsushi Koma Polytypes and charge density waves of ultrathin TaS2 films grown by van der Waals epitaxy Surface Science 1993;291(1-2):57-66. Toshihiro Shimada; Fumio S. Ohuchi; Atsushi Koma Molecular beam epitaxy of SnSe2: Chemistry and electronic properties of interfaces Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 1993;32(3 A):1182-1185. [1991] J.H. Selverian; F.S. Ohuchi; M. Bortz; M.R. Notis Interface reactions between titanium thin films and (1-1 2) sapphire substrates Journal of Materials Science 1991;26(23):6300-6308. Benji Maruyama; Fumio S. Ohuchi H 2O catalysis of aluminum carbide formation in the aluminum-silicon carbide system Journal of Materials Research 1991;6(6):1131-1134. F.S. Ohuchi; T. Shimada; B.A. Parkinson; K. Ueno; A. Koma Growth of MoSe2 thin films with Van der Waals epitaxy Journal of Crystal Growth 1991;111(1-4):1033-1037. B.A. Parkinson; F.S. Ohuchi; K. Ueno; A. Koma Periodic lattice distortions as a result of lattice mismatch in epitaxial films of two-dimensional materials Applied Physics Letters 1991;58(5):472-474. R.H. French; J.W. Ling; F.S. Ohuchi; C.T. Chen Electronic structure of -BaB2O4 and LiB3O5 nonlinear optical crystals Physical Review B 1991;44(16):8496-8502. [1990] B. Maruyama; F.S. Ohuchi; L. Rabenberg Catalytic carbide formation at aluminium-carbon interfaces Journal of Materials Science Letters 1990;9(7):864-866. Fumio S. Ohuchi; Qian Zhong Electronic structure of metal-ceramic interfaces ISIJ International 1990;30(12):1059-1065. F.S. Ohuchi; B.A. Parkinson; K. Ueno; A. Koma Van der Waals epitaxial growth and characterization of MoSe2 thin films on SnS2 Journal of Applied Physics 1990;68(5):2168- 2175. [1989] Fumio S. Ohuchi Surface science studies of Nb-(0001)Al2O3 interfacial reactions Journal of Materials Science Letters 1989;8(12):1427-1429. M.L. Bortz; F.S. Ohuchi; B.A. Parkinson An investigation of the growth of Au and Cu on the van der waals surfaces of MoTe2 and WTe2 Surface Science 1989;223(1-2):285-298. W. Jaegermann; F.S. Ohuchi; B.A. Parkinson Electrochemical and solid state reactions of copper with n-SnS2 Berichte der Bunsengesellschaft/Physical Chemistry Chemical Physics 1989;93(1):29-37. F.S. Ohuchi; W. Jaegermann; C. Pettenkofer; B.A. Parkinson Semiconductor to metal transition of WS2 induced by K intercalation in ultrahigh vacuum Langmuir 1989;5(2):439- 442. [1988] M. Bortz; F.S. Ohuchi Synthesis and characterization of cordierite-based ceramic thin films Thin Solid Films 1988;162(C):315-323. W. Jaegermann; F.S. Ohuchi; B.A. Parkinson Interaction of group IB metals with van der Waals faces of semiconducting metal dichalcogenides Surface and Interface Analysis 1988;12(1-12):293-296. R.H. French; R.L. Coble; R.V. Kasowski; F.S. Ohuchi Vacuum ultraviolet, photoemission and theoretical studies of the electronic structure of Al2O3 up to 1000°C Physica B+C 1988;150(1-2):47-49. Robert V. Kasowski; Fumio S. Ohuchi; Roger H. French Theoretical and experimental studies on Cu metallization of Al2O3 Physica B+C 1988;150(1-2):44-46. Michael Bortz; Fumio S. Ohuchi An x-ray photoelectron spectroscopy study of the interfacial relations between titanium and cordierite-based ceramic thin films Journal of Applied Physics 1988;64(4):2054-2058. Dermot O'Hare; Wolfram Jaegermann; D.L. Williamson; Fumio S. Ohuchi; B.A. Parkinson X- ray photoelectron Mössbauer, magnetic, and electrical conductivity study of SnS2{CoCp2}0.31 Inorganic Chemistry 1988;27(9):1537-1542. F.S. Ohuchi; W. Jaegermann; B.A. Parkinson XPS investigation of the reaction of SnS2(0001) with Cu Surface Science 1988;194(1-2):L69-L76. W. Jaegermann; F.S. Ohuchi; B.A. Parkinson Interaction of Cu, Ag and Au with van der Waals faces of WS, and SnS2 Surface Science 1988;201(1-2):211-227. [1987] S.C. Freilich; F.S. Ohuchi Reactions at the polyimide-metal interface Polymer 1987;28(11):1908-1914. R.H. French; R.L. Coble; R.V. Kasowski; F.S. Ohuchi VACUUM ULTRAVIOLET, PHOTOEMISSION AND THEORETICAL STUDIES OF THE ELECTRONIC STRUCTURE OF Al//2O//3 UP TO 1000 degree C. Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics 1987;150(1-2):47-49. Robert V. Kasowski; Fumio S. Ohuchi; Roger H. French THEORETICAL AND EXPERIMENTAL STUDIES ON Cu METALLIZATION OF Al//2O//3. Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics 1987;150(1-2):44-46. F.S. Ohuchi; R.H. French; R.V. Kasowski Cu deposition on Al2O3 and AlN surfaces: Electronic structure and bonding Journal of Applied Physics 1987;62(6):2286-2289. R.V. Kasowski; F.S. Ohuchi Electronic structure of Cu overlayers on AlN Physical Review B 1987;35(17):9311-9313. [1985] William E. Farneth; Fumio Ohuchi; Ralph H. Staley; Uma Chowdhry; Arthur W. Sleight Mechanism of partial oxidation of methanol over MoO 3 as studied by temperature- programmed desorption Journal of Physical Chemistry 1985;89(12):2493-2497. U. Chowdhry; A. Ferretti; L.E. Firment; C.J. Machiels; F. Ohuchi; A.W. Sleight; R.H. Staley Mechanism and surface structural effects in methanol oxidation over molybdates Applied Surface Science 1984;19(1-4):360-372. [1983] Gar B. Hoflund; David F. Cox; Fumio Ohuchi; P.H. Holloway; Herbert A. Laitinen An ESD and SIMS study of the composition of platinized, antimony-doped tin oxide films. I Applications of Surface Science 1983;14(3-4):281-296. 1 [1982] U. Chowdhry; C.J. Machiels; F. Ohuchi; A.W. Sleight; J.F. Weiher MOLYBDATE OXIDATION CATALYSTS. American Chemical Society, Division of Petroleum Chemistry, Preprints 1982;27(2):594-. F. Ohuchi; P.H. Holloway CONTRIBUTION OF ELECTRON STIMULATED DESORPTION TO ELECTRON BEAM DAMAGE IN OXIDES. Scanning Electron Microscopy 1982;(pt 4):1453- 1463. [1981] F. Ohuchi; P.H. Holloway GENERAL MODEL OF SODIUM DESORPTION AND DIFFUSION DURING ELECTRON BOMBARDMENT OF GLASS. Journal of vacuum science & technology 1981;20(3):863-867. [1980] F. Ohuchi; M. Ogino; P.H. Holloway; C.G. Pantano Jr. ELECTRON BEAM EFFECTS DURING ANALYSIS OF GLASS THIN FILMS WITH AUGER ELECTRON SPECTROSCOPY. Surface and Interface Analysis 1980;2(3):85-90. P.H. Holloway; F. Ohuchi ELECTRON BEAM EFFECTS DURING AES ANALYSIS OF GLASS. Society of Petroleum Engineers of AIME, (Paper) SPE 1980;2():1372-1375. M. Ogino; F. Ohuchi; L.L. Hench Compositional dependence of the formation of calcium phosphate films on bioglass Journal of Biomedical Materials Research 1980;14(1):55-64. [1979] F. Ohuchi; D.E. Clark; L.L. Hench EFFECT OF CRYSTALLIZATION ON THE AUGER ELECTRON SIGNAL DECAY IN AN Li//2O multiplied by (times) 2SiO//2 GLASS AND GLASS- CERAMIC. Journal of the American Ceramic Society 1979;62(9-10):500-503.