Dispersions of Single Walled Carbon Nanotubes (SWCNTs) are excellent candidates for future high frequency printed, large-area and flexible electronics. During the last ten years, great efforts have been devoted to the development of solubilizing and sorting techniques to produce high quality semiconducting inks based on SWCNTs. Polymer wrapping represents one of the most interesting approaches, enabling selective separation of SWCNTs with controlled diameter and chirality resulting in high purity semiconducting solutions. Such strategy has recently led to high-mobility ambipolar field-effect transistors (FETs) with coated SWCNTs layers presenting ON/OFF ratios up to 10^8.In the perspective of large-scale applications, scalable and low cost methods for the deposition over large area, flexible plastic substrates have to be adopted. “Drop on Demand” Inkjet printing affords a promising pathway for the development of high performance printed electronics because of its advantages in terms of precise patterning and low waste of materials. In this work we have fabricated ambipolar FETs by inkjet printing a solution of SWCNTs wrapped by Poly(3-dodecylthiophene-2,5-diyl) in dichlorobenzene and adopting polymethyl methacrylate as a dielectric in a top-gate architecture. By controlling the volume of solution deposited, we could tune the charge transport in our SWCNTs FETs, passing from a balanced ambipolar behavior, with mobility up to 8 cm^2/Vs for both the carriers, to a p-type unipolar behavior, with mobility values higher than 10 cm^2/Vs. Thus, exploiting the ambipolar transport of the printed SWCNTs, we successfully realized complementary-like inverters with gains up to
17. The extracted transition frequency, which is the maximum working frequency of a device, for FETs not optimized for high frequency operation, is well in the MHz range. Furthermore, by combining two digital techniques, Inkjet Printing for the deposition of conductive lines, and Femtosecond Laser Ablation, for the fine patterning of electrodes, we fabricated high performance, all-direct written SWCNTs FETs on flexible polymeric substrates with micrometer and sub-micrometer channel lengths. Our work demonstrates the strong potential of polymer wrapped SWCNTs based inks for high frequency all printed and direct-written electronics.