Effect of Structure and Interfacial Disorder on Charge Mobility in Naphthalene Diimide Based Organic Field Effect Transistors.

Deepak Shukla
Eastman Kodak Company


Abstract

Abstract

In organic field effect transistors (OFETs) molecular structure of the organic semiconductor as well as the nature of semiconductor-dielectric interface have impact on carrier mobility of a given semiconductor in OFETs. Careful control of conformation and configuration of substituents in symmetrically disubstituted naphthalene diimides and its effect on crystalline packing and field effect mobilities in OFETs will be described. We’ll show that in N,N’-bis(cycloalkyl)naphthalene diimides (NDI-CHEX) based semiconductors, careful configurational control of alkyl substituents on cyclohexane rings results in electron mobility greater than 5 cm2/V.s. We’ll also discuss molecular level description of energetic disorder at the semiconductor-dielectric interface in such devices and its impact on carrier mobility. Design of polymeric dielectric materials to suppress energetic disorder at the interface will be described.