Low-voltage high-performance organic thin film transistors with a thermally annealed polystyrene/hafnium oxide dielectric

Citation

Wang, Y.; Acton, O.; Ting, G.; Weidner, T.; Ma, H.; Castner, D. G.; & Jen, A. K. Y. (2009). Low-voltage high-performance organic thin film transistors with a thermally annealed polystyrene/hafnium oxide dielectric. Applied Physics Letters, 95(24).

Abstract

Low-voltage pentacene-based organic thin film transistors (OTFTs) are demonstrated with polystyrene (PS)/hafnium oxide (HfO(x)) hybrid dielectrics. Thermal annealing of PS films on HfO(x) at 120 degrees C (PS-120) induces a flatter orientation of the phenyl groups (tilt angle 65 degrees) at the surface compared to PS films without annealing (PS-RT) (tilt angle 31 degrees). The flatter phenyl group orientation leads to better matching of surface energy between pentacene and PS. Pentacene deposited on PS-120 display higher quality thin films with larger grain sizes and higher crystallinity. Pentacene OTFTs with PS-120/HfO(x) hybrid dielectrics can operate at low-voltage (< 3 V) with high field-effect mobilities (1 cm(2)/V s), high on/off current ratios (10(6)), and low subthreshold slopes (100 mV/dec).

Keyword(s)

annealing
dielectric materials
electron
field-effect transistors
gate-dielectrics
gel
hafnium compounds
interfaces
molecular-orientation
organic semiconductors
pentacene
spectroscopy
surface
surface energy
thin film transistors

Notes

535GI
Times Cited:12
Cited References Count:23

Reference Type

Journal Article

Secondary Title

Applied Physics Letters

Author(s)

Wang, Y.
Acton, O.
Ting, G.
Weidner, T.
Ma, H.
Castner, D. G.
Jen, A. K. Y.

Year Published

2009

Date Published

1765670400

Volume Number

95

Issue Number

24

DOI

Artn 243302
Doi 10.1063/1.3268455