Spin-Cast and Patterned Organophosphonate Self-Assembled Monolayer Dielectrics on Metal-Oxide-Activated Si

Citation

Acton, O.; Hutchins, D.; Arnadottir, L.; Weidner, T.; Cernetic, N.; Ting, G. G.; Kim, T. W.; Castner, D. G.; Ma, H.; & Jen, A. K. Y. (2011). Spin-Cast and Patterned Organophosphonate Self-Assembled Monolayer Dielectrics on Metal-Oxide-Activated Si. Advanced Materials, 23(16), 1899-+.

Abstract

An efficient process is developed for modifying Si with self-assembled monolayers (SAMs) through in situ metal oxide surface activation and microcontact printing or spin-coating of phosphonic-acid-based molecules. The utility of this process is demonstrated by fabricating self-organized and solution-processed low-voltage organic thin-film transistors enabled by patterned and spincast phosphonate SAM/metal oxide hybrid dielectrics.

Keyword(s)

aluminum
complementary circuits
electronics
interface
phosphonic acid
silicon
surface
thin-film transistors
voltage organic transistors

Notes

763HT
Times Cited:17
Cited References Count:33

Reference Type

Journal Article

Secondary Title

Advanced Materials

Author(s)

Acton, O.
Hutchins, D.
Arnadottir, L.
Weidner, T.
Cernetic, N.
Ting, G. G.
Kim, T. W.
Castner, D. G.
Ma, H.
Jen, A. K. Y.

Year Published

2011

Date Published

1745625600

Volume Number

23

Issue Number

16

Pages

1899-+

DOI

DOI 10.1002/adma.201004762