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Dilute Magnetic
Dielectrics: New Spintronics Materials and Devices
Funding: NSF/ECS #0501490 (5/05-4/08)
Project summary:
This research is directed at the development
of a spin injection technique utilizing a new class
of materials, diluted magnetic dielectrics (DMD).
DMD are both ferromagnetic at room temperature and
yet insulating, the latter in contrast with diluted
magnetic semiconductors (DMS). This proposal will
make use of our recent observation that the presence
of carriers is not required for ferromagnetism in
wide band gap oxides such as TiO2 or ZnO doped with
transition metal ions. Spin injection will be achieved
through spin filtering in a magnetic tunnel barrier.
This research will explore both fundamental material
and device issues of DMD materials and their practical
application. Magnetic, structural, morphological
and dielectric properties of DMD thin films will
be optimized in application to spin filtering barriers.
For this purpose, scaling laws will be found for
the physical properties with the film thickness
decreasing to ~2 nanometers, an estimated optimum
barrier thickness. This will also provide a new
insight into the mechanisms of ferromagnetism in
DMD materials. The final objective of this research
is to investigate both spin filtering and electrical
spin injection via DMD spin filter tunnel barriers,
and to demonstrate prototype device structures using
these effects. The demonstration device structures
will be grown epitaxially using sputtering techniques
and investigated by a variety of advanced characterization,
and measurement methods. Broadly, this research
will add momentum to the development of the field
of semiconductor spin electronics by providing a
realistic route for the development of practically
useful devices. Effective injection of magnetically
polarized current carriers into semiconductor structures,
especially at room temperatures, and the demonstration
of a practical device are the goals.
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