@patent{cobb_apparatus_2014,

title = {Apparatus for controlling gas distribution using orifice ratio conductance control},

author = {Corie Lynn Cobb and Ming Xu},

url = {https://patents.google.com/patent/US8905074B2/en},

year  = {2014},

date = {2014-01-01},

urldate = {2018-03-05},

number = {US8905074B2},

abstract = {Apparatus for controlling gas distribution are provided. In some embodiments, apparatus for controlling gas distribution may include a first flow path from an inlet to a first outlet; a plurality of first orifices disposed within the first flow path; a plurality of first valves that control gas flow through the plurality of first orifices to control a total gas flow at the first outlet; a second flow path from the inlet to a second outlet; a plurality of second orifices disposed along the second flow path; a plurality of second valves that control gas flow through respective ones of the plurality of second orifices to control a total gas flow at the second outlet; and a mounting block having the plurality of first valves and second valves coupled thereto, wherein at least a portion of the first flow path and the second flow path is disposed within the mounting block.},

keywords = {semiconductor processing},

pubstate = {published},

tppubtype = {patent}

}

@patent{cruse_methods_2014,

title = {Methods and apparatus for calibrating flow controllers in substrate processing systems},

author = {James P Cruse and John W Lane and Mariusch Gregor and Duc Buckius and Berrin Daran and Corie Lynn Cobb and Ming Xu and Andrew Nguyen},

url = {https://patents.google.com/patent/US8707754B2/en},

year  = {2014},

date = {2014-01-01},

urldate = {2018-03-05},

number = {US8707754B2},

abstract = {Methods and apparatus for calibrating a plurality of gas flows in a substrate processing system are provided herein. In some embodiments, a substrate processing system may include a cluster tool comprising a first process chamber and a second process chamber coupled to a central vacuum transfer chamber; a first flow controller to provide a process gas to the first process chamber; a second flow controller to provide the process gas to the second process chamber; a mass flow verifier to verify a flow rate from each of the first and second flow controllers; a first conduit to selectively couple the first flow controller to the mass flow verifier; and a second conduit to selectively couple the second flow controller to the mass flow verifier.},

keywords = {semiconductor processing},

pubstate = {published},

tppubtype = {patent}

}

@patent{lee_process_2011,

title = {Process chambers having shared resources and methods of use thereof},

author = {Jared Ahmad Lee and James P Cruse and Andrew Nguyen and Corie Lynn Cobb and Ming Xu and Martin Jeff Salinas and Anchel Sheyner},

url = {https://patents.google.com/patent/US20110269314A1/en?inventor=Corie+Lynn+Cobb},

year  = {2011},

date = {2011-11-01},

urldate = {2018-03-05},

number = {US20110269314A1},

abstract = {Process chambers having shared resources and methods of use are provided. In some embodiments, substrate processing systems may include a first process chamber having a first substrate support disposed within the first process chamber, wherein the first substrate support has a first heater and a first cooling plate to control a temperature of the first substrate support; a second process chamber having a second substrate support disposed within the second process chamber, wherein the second substrate support has a second heater and a second cooling plate to control a temperature of the second substrate support; and a shared heat transfer fluid source having an outlet to provide a heat transfer fluid to the first cooling plate and the second cooling plate and an inlet to receive the heat transfer fluid from the first cooling plate and the second cooling plate.},

keywords = {semiconductor processing},

pubstate = {published},

tppubtype = {patent}

}

@patent{xu_twin_2011,

title = {Twin chamber processing system},

author = {Ming Xu and Andrew Nguyen and Evans Lee and Jared Ahmad Lee and James P Cruse and Corie Lynn Cobb and Martin Jeff Salinas and Anchel Sheyner and Ezra Robert Gold and John W Lane},

url = {https://patents.google.com/patent/US20110265951A1/},

year  = {2011},

date = {2011-11-01},

urldate = {2018-03-05},

number = {US20110265951A1},

abstract = {Methods and apparatus for twin chamber processing systems are disclosed, and, in some embodiments, may include a first process chamber and a second process chamber having independent processing volumes and a plurality of shared resources between the first and second process chambers. In some embodiments, the shared resources include at least one of a shared vacuum pump, a shared gas panel, or a shared heat transfer source.},

keywords = {semiconductor processing},

pubstate = {published},

tppubtype = {patent}

}

@patent{cruse_methods_2011,

title = {Methods and apparatus for reducing flow splitting errors using orifice ratio conductance control},

author = {James P Cruse and Ezra Robert Gold and Jared Ahmad Lee and Ming Xu and Corie Lynn Cobb and Andrew Nguyen and John W Lane},

url = {https://patents.google.com/patent/US20110265883A1/en},

year  = {2011},

date = {2011-11-01},

urldate = {2018-03-13},

number = {US20110265883A1},

abstract = {Methods and apparatus for gas delivery to a process chamber are provided herein. In some embodiments, an apparatus for processing substrates may include a mass flow controller to provide a desired total fluid flow; a first flow control manifold comprising a first inlet, a first outlet, and a first plurality of orifices selectably coupled therebetween, wherein the first inlet is coupled to the mass flow controller; and a second flow control manifold comprising a second inlet, a second outlet, and a second plurality of orifices selectably coupled therebetween, wherein the second inlet is coupled to the mass flow controller; wherein a desired flow ratio between the first outlet and the second outlet is selectably obtainable when causing the fluid to flow through one or more of the first plurality of orifices of the first manifold and one or more of the second plurality of orifices of the second manifold.},

keywords = {semiconductor processing},

pubstate = {published},

tppubtype = {patent}

}